copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 1 /6 n - channel enhanced mode sot - 223 mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 400 v i d continuous drain current (@t c =25 o c) 4* a continuous drain current (@t c =100 o c) 2.5* a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 136 mj e ar repetitive avalanche energy (note 1) 20 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 6.3 w derating factor above 25 o c 0.05 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 20 o c/w r thja thermal resistance, junction to ambient o c /w *. drain current is limited by junction temperature. bv dss : 400v i d : 4a r ds(on) : 1.4? 1. gate 2. drain 3. source sot - 223 1 2 3 order codes item sales type marking package packaging 1 sw sa 4n40d SW4N40D sot - 223 reel 1 2 3 features ? high ruggedness ? low r ds( on ) (t yp 1.4 ? )@v gs =10v ? low gate charge ( typ 8.5nc) ? improved dv/dt capability ? 100% avalanche tested ? application:charge, adaptor, led general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 2 /6 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 400 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.47 v/ o c i dss drain to source leakage current v ds =400 v, v gs =0v 1 ua v ds =320v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d =2a 1.4 1.7 ? g fs forward transconductance v ds =30v, i d =2 a 2.7 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 354 pf c oss output capacitance 55 c rss reverse transfer capacitance 18 t d(on) turn on delay time v ds =200v, i d =4a, r g =25?, v gs =10v (note 4,5) 8 ns t r rising time 28 t d(off) turn off delay time 25 t f fall time 25 q g total gate charge v ds =320v, v gs =10v, i d =4a (note 4,5) 8.5 nc q gs gate - source charge 0.3 q gd gate - drain charge 5 r g gate resistance v ds =0v, scan f mode 2.9 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 4 a i sm pulsed source current 16 a v sd diode forward voltage drop. i s =4a, v gs =0v 1.4 v t rr reverse recovery time i s =4a, v gs =0v, di f / dt =100a/us 228 ns q rr reverse recovery c harge 1.1 u c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 17 m h, i as = 4a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 3 /6 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 4 /6 fig. 8. c apacitance characteristics fig. 9. transient thermal response curve fig. 7 . maximum safe operating area fig. 10. gate charge test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 5 /6 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 11 . switching time test circuit & waveform fig. 13 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds du t *. dv/dt controlled by rg *. is controlled by pulse period v gs ( driver ) i s ( dut ) v ds ( dut ) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd fig. 12 . unclamped inductive switching test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. SW4N40D jun . 2016. rev. 2.0 6 /6 disclaimer * all the data & curve in this document was tested in xian semipower testing & application center. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com
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